This dataset contains the results of Ramped Voltage Stresses (Ig-Vg curves) applied to induce the BD of the gate stack of FDSOI nanowire transistors, together with the corresponding post-BD Id-Vd, Id-Vg and Ig-Vg characteristics of the devices. From the data, the BD event and post-BD conduction of such devices were investigated. The dataset corresponds to the set of data obtained from the experimental measurements without any type of processing.

METHODOLOGICAL INFORMATION

1. The dataset corresponds to the Ig-Vg curves measured during ramped voltage stresses applied to induce the BD of the gate dielectric of MOSFETs and the corresponding post-BD Id-Vd, Id-Vg and Ig-Vg characteristics. The analyzed devices are pMOS and nMOS FDSOI Ω-gate nanowire-FETs (NW-FET), with a 145nm thick buried oxide and a HfSiON/TiN gate stack with EOT=1.3nm and HNW=11nm. Devices with two different widths were studied: (1) W = 30 nm (1-channel) with lengths of 20, 40, 120 and 1000 nm, and (2) Weff = 300 nm (split in 10 channels of W = 30 nm) with two lengths (20 and 40 nm). Ramped voltage stresses (RVS) were applied to the gate (from 0 to |10 V|, with VD=VS = 0 V) to induce oxide wear out and BD. No current limitation was applied during the RVS stress. The Id-Vd, Id-Vg and Ig-Vg post-BD characteristics of the transistors were registered after the RVS test to study the post-BD behaviour of devices in this technology. The measurements were carried out at room temperature. Only for pMOS devices with W=30nm and L=20 and 1000nm, measurements at 85ºC and 125ºC were also performed. A total of 298 devices (177 pMOS and 121 nMOS) have been measured, to obtain statistical information. The measurements have been performed at wafer level, using a wafer probe station and a Semiconductor Paramater Analyzer (keithley 4200A-SCS).

2. Methods for processing the data: Data has not been processed.

3. Instrument- or software- specific information needed to interpret the data: Microsoft Excel

4. Instruments, calibration and standards information: Keithley 4200A-SCS

5. Environmental or experimental conditions: The measurements were done in ambient conditions, at different temperatures, as 25º, 85º and 125º