In addition to smoothing and self-affine roughening ion bombardment of solid surfaces can result in ripple and dot structures with nanometer scale dimensions. This method represents a novel, simple and inexpensive alternative for the production of nanoscale arrays in semiconductors with possible photonic applications. We have begun an experimental and theoretical investigation into IB nanostructure formation. Our initial work centres on the use of Ar+ irradiation of Silicon where we have successfully created a ripple structure. A key component of our work is a structural characterisation of the ripple structure as a function of ions, substrate, fluence and incident angle. X-ray characterisation has proven problematic due to the effects of beam damage and resolution. The spin-echo technique is a new tool that can be applied to these samples.