This continuing experiment is proposed based on our previous experiment RB1510208, which we have carried out just recently. The experiment successfully observed the lifetime of the photoinduced carriers in intrinsitc silicon by utilising a combination of pulsed laser and muons. We could observe its temperature dependence from 291 to 20 K, but it is still necessary to have more data points in the low temperature range because this is where scientifically most important. We have also measured the ALC spectra changing dynamically as a function of laser-muon delay time. This observation brought us an idea of separating the charge carriers by an electric field, and observe the interaction of Mu and electrons/holes independently. This would also show us the dynamic feature of these carriers.