In the past years we have developed a method measuring carrier recombination lifetime in semiconductors using the photo-MuSR setup in HIFI. These studies have focused on indirect semiconductors, such as Si and Ge, with excess carrier lifetimes longer than 1 microseconds. On the other hand many of the emerging semiconductors have a direct band structure, where injected carriers are funneled into the band minimum and quickly recombined typically in the order of nanoseconds. In this study we aim to apply the photo-MuSR method to these cases utilizing the upgraded DAE in HIFI. Because the experimental approach is different from the previous ones, we put this proposal in as a new submission.