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MuSR study on optically injected electronic spin in GaAs
In the field of semiconductor spintronics, n-type GaAs has been utilized as a prototype system, where one can inject electronic spin and study its behavior with optical... -
Can photo-MuSR method measure carrier recombination lifetime in direct gap se...
In the past years we have developed a method measuring carrier recombination lifetime in semiconductors using the photo-MuSR setup in HIFI. These studies have focused on... -
Muonium-photocarrier interaction in germanium
Having established the photo-MuSR method in intrinsic silicon to investigate excess carrier recombination lifetime and Mu-photocarrier dynamics in our previous experiments, we...