NiO has useful electronic, magnetic and catalytic properties. It is also used in creation of OxRRAM¿s, that are considered as a better alternative to Flash memory due its low-power operations. We propose to study the magnetic moment in the Ni layer of Ni/NiO/Ni OxRRAM grown epitaxially on MgO(100) as a function of Ni and NiO thicknesses and also to study the magnetic interface between the Ni and NiO. We have already achieved epitaxial and stoichiometric growth of NiO and showed it through various measurement techniques. The study of Ni/NiO/Ni OxRRAM¿s is seen as the next step in the current research. The layer sensitivity of PNR allow the Ni layer to be probed and the interfaces of to the NiO to be studied. The results thus obstained in conjunction with resistivity and binary switching mode measurements will allow for a better understanding of the principles behind OxRRAM devices.