Study of change in magnetic momentum in Ni/NiO/Ni structures

DOI

NiO has useful electronic, magnetic and catalytic properties. It is also used in creation of OxRRAM¿s, that are considered as a better alternative to Flash memory due its low-power operations. We propose to study the magnetic moment in the Ni layer of Ni/NiO/Ni OxRRAM grown epitaxially on MgO(100) as a function of Ni and NiO thicknesses and also to study the magnetic interface between the Ni and NiO. We have already achieved epitaxial and stoichiometric growth of NiO and showed it through various measurement techniques. The study of Ni/NiO/Ni OxRRAM¿s is seen as the next step in the current research. The layer sensitivity of PNR allow the Ni layer to be probed and the interfaces of to the NiO to be studied. The results thus obstained in conjunction with resistivity and binary switching mode measurements will allow for a better understanding of the principles behind OxRRAM devices.

Identifier
DOI https://doi.org/10.5286/ISIS.E.24089282
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/24089282
Provenance
Creator Dr Jos Cooper; Mr Gleb Cheglakov; Dr Adrian Ionescu; Dr Crispin Barnes; Mr Jun Young Kim
Publisher ISIS Neutron and Muon Source
Publication Year 2015
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Photon- and Neutron Geosciences
Temporal Coverage Begin 2012-07-26T08:15:11Z
Temporal Coverage End 2012-10-04T08:04:36Z