We intend to detail the muonium dynamics and investigate the interaction with charge carriers in n-type ZnSe. A doped ZnSe sample (resistivity=10^4 Ohm.cm, n=10^13 cm^-3) is proposed to be investigated by means of the RF-muSR resonance technique from 10 K to 600K. This will allow to perform final-state analysis at the diamagnetic fraction and thus clarify the role of charge carriers in the muon spin dynamics. This is expected to contribute to further enlighten the role of muonium/hydrogen in the electrical conductivity of this particularly important material for optoelectronics.