This dataset contains electrical and thermal measurements of silicon (Si) IGBT power transistors subjected to accelerated power cycling aging tests until complete failure. The dataset includes key electrical indicators such as collector current (Ic) and collector-emitter saturation voltage (Vce), as well as thermal variables including junction temperature (Tj), case temperature (Tc), and ambient temperature (Tamb). Additionally, the IGBT conduction losses (Pce) and the junction-to-case thermal resistance (Rth,j–c) are provided as derived variables. The dataset captures the degradation process of three devices under test (DUTs), from the first observed changes in measured parameters until complete failure (loss of operation), under controlled laboratory conditions. The experimental methodology and test conditions are largely based on the ECPE AQG 324 guidelines, with specific adaptations introduced to better align with the objectives of this study. These adaptations primarily consist of combining power-cycling and high-temperature operation, which represent the dominant stressing factors driving device degradation. It is suitable for reliability analysis, degradation modeling, state-of-health (SoH) estimation and prognostics applications such as remaining useful life (RUL) estimation.