We propose to study Fe based tunnelling anisotropic magnetoresistance (TAMR) structures. TAMR is a newly discovered effect potentially combining advantages of the anisotropic MR and tunnelling MR effects, which are now indispensable in hard disk technology and semiconductor spintronics research. In these structures a large TAMR effect has been predicted theoretically but not been observed experimentally. We intend to investigate the role of the minority spin surface resonance by inserting thin Ag interlayers and the effect of increased spin orbit coupling by alloying with Pt. The TAMR junctions will be grown on semiconductor spin-LED devices thus allowing the investigation of the interplay between spin injection and TAMR.