This dataset corresponds to the experimental data (ID-t characteristics) obtained on pre-stressed commercial Organic Thin Film Transistors (OTFT). From these data, the suitability of the variability of the drain current (ID) as entropy source for the implementation of Physical Unclonable Functions (PUFs) has been evaluated.

METHODOLOGICAL INFORMATION

1. This dataset contains the ID-t curves recorded on 100 OTFTs during the measurement phases of the measurement-stress-measurement (MSM) tests applied to the devices. Four-terminal Organic TFTs with a top gate (G), back gate (BG), source (S), drain (D) and multiple channels and with a width of W=360μm and a length of L=2.5μm have been studied. The devices were fabricated by SmartKem Ltd. (Manchester, UK). These OTFTs incorporate SmartKem’s proprietary TRUFLEX™ material stack, which consists of a glass substrate, base layer (BL), organic semiconductor (OSC), organic gate insulator (OGI), sputter resistant layer (SRL) and passivation layer (PL); source and drain are made of gold. The electrical tests consisted of 8 cycles of MSM tests, with stress durations 10s (1st cycle), 100s (2nd cycle) and 400s (the rest of cycles). BTI stress (VG=-10V and VD=VS=0) was used as electrical stress. Before and after each stress phase (i.e. during the measurement phases), the ID-t curves were measured at VD=VG=-10V during 100s, from which the impact of the previous stress on ID has been evaluated. The dataset corresponds to experimental measurements without any type of processing.

2. Methods for processing the data: Data has not been processed

3. Instrument- or software- specific information needed to interpret the data: Microsoft Excel

4. Instruments, calibration and standards information: Keithley 4200A-SCS

5. Environmental or experimental conditions: The measurements were done in ambient conditions, at room temperature.

FILE OVERVIEW + TABULAR DATA-SPECIFIC INFORMATION

The dataset contains 9 files. The first one, named "0 Data" corresponds to the ID-t curves of the 100 devices before any stress. The rest of files, named "X Data" (with X ranging from 1 to 8), correspond to the ID-t curves of the 100 devices recorded during the 8 measurement phases that follow the 8 stress cycles. Each file contains the following information, for each measurement phase: Colum A corresponds to the time at which the current was measured, given in seconds; the rest of columns, from "Device 0" to "Device 99" are the ID currents (given in Amperes) measured for each device (100 devices in total).