Probing the carrier-induced donor-to-acceptor transition of muonium in indium oxide

DOI

The first experiment we propose is a search for a shallow-donor signal for muonium in indium oxide. Its observation would test our assertion, based on our measurements of surface and bulk electronic properties, that the charge neutrality level and therefore the muonium pinning level lies in the conduction band. This follows our previous work on donor muonium in InAs, where the donor ionization energy and hyperfine splitting proved to be too small to resolve. However, the effective mass is fourteen times larger in indium oxide than in InAs, making the shallow-donor signal significantly easier to find. A second, more novel and experimentally easier investigation is also proposed, namely to look for a transition in n-type In2O3 from the Mu+ diamagnetic charge state to the Mu- when tin doping is used to change the Fermi level from below to above the Mu pinning or charge neutrality level.

Identifier
DOI https://doi.org/10.5286/ISIS.E.24065704
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/24065704
Provenance
Creator Dr Tim Veal; Professor Roger Lichti; Dr Gurkan Celebi
Publisher ISIS Neutron and Muon Source
Publication Year 2012
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Photon- and Neutron Geosciences
Temporal Coverage Begin 2009-02-13T16:38:25Z
Temporal Coverage End 2009-06-25T08:28:37Z