The first experiment we propose is a search for a shallow-donor signal for muonium in indium oxide. Its observation would test our assertion, based on our measurements of surface and bulk electronic properties, that the charge neutrality level and therefore the muonium pinning level lies in the conduction band. This follows our previous work on donor muonium in InAs, where the donor ionization energy and hyperfine splitting proved to be too small to resolve. However, the effective mass is fourteen times larger in indium oxide than in InAs, making the shallow-donor signal significantly easier to find. A second, more novel and experimentally easier investigation is also proposed, namely to look for a transition in n-type In2O3 from the Mu+ diamagnetic charge state to the Mu- when tin doping is used to change the Fermi level from below to above the Mu pinning or charge neutrality level.