The proposed experiment is to observe optical spin-injection in Silicon through MuSR detection. An important part of research in next generation electronics focusses on the manipulation of spin as well as the charge of electrons in semiconductor devices. This may lead to improved integration of memory and processing resulting in higher density and lower heat dissipation. Silicon is an indirect bandgap material and it is generally accepted that optical spin-injection does not occur. We believe that it is possible in a narrow spectral range at the indirect bandgap and that it can be detected using the intrinsic spin sensitivity of MuSR. If MuSR is able to detect that spin-polarization, it will establish a particle-based probe for advancing Silicon spintronics. If optical spin-injection is observed, it will establish a powerful optical tool for studying spin-dynamics in Silicon.