Neutron scattering study on noncollinear antiferromagnets D019 hcp-Mn3X (X = Ga and Sn) thin films

DOI

Currently, we are reaching capacity limits in conventional Si-based memory devices, due to restrictions on further miniaturization. The concept of antiferromagnetic spin electronics (spintronics) has gained much traction to overcome this challenge. It has become clear that AFMs are actually vastly advantageous to realize memory devices, being far more robust than FM-based devices, with high packing density, and insensitivity to external fields. Unfortunately, to date, only a few materials have emerged as candidates. Thus, in our research, we have searched for the new non-collinear AFM Mn3X (X = Ga, Sn) materials and have fabricated them in thin film form. In order to access its fundamental magnetic property, we will use a magnetic neutron scattering technique to observe its noncollinear magnetic configuration.

Identifier
DOI https://doi.org/10.5286/ISIS.E.RB1920534-1
Metadata Access https://icatisis.esc.rl.ac.uk/oaipmh/request?verb=GetRecord&metadataPrefix=oai_datacite&identifier=oai:icatisis.esc.rl.ac.uk:inv/108679342
Provenance
Creator Mr Denis Dyck; Mr Samer Kurdi; Dr Jay Koo; Dr Pascal Manuel; Mr Philipp Zilske; Professor Guenter Reiss
Publisher ISIS Neutron and Muon Source
Publication Year 2022
Rights CC-BY Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/
OpenAccess true
Contact isisdata(at)stfc.ac.uk
Representation
Resource Type Dataset
Discipline Natural Sciences; Physics
Temporal Coverage Begin 2019-12-09T08:30:00Z
Temporal Coverage End 2019-12-13T09:03:52Z