Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

DOI

The data set consists of the raw and analysis data. Positron annihilation lifetime spectroscopy depth profiles were measured at the positron ELBE during the PI beamtime on November 2023 (POS23203233). MBE deposited Ge layers at temperatures of 100°C - 350°C have been evaluated concerning defect microstructure. The most dominant defect, namely Ge vacancy, has been evidenced independently on the temperature conditions. The results support the main claim of the manuscript, feasibility of the low temperature growth approach to Ge.

Identifier
DOI https://doi.org/10.14278/rodare.3327
Related Identifier Cites https://doi.org/10.17815/jlsrf-2-58
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Provenance
Creator Wilflingseder, Christoph; Aberl, Johannes; Prado Navarrete, Enrique; Hesser, Guenter; Groiss, Heiko; Liedke, Maciej Oskar ORCID logo; Butterling, Maik ORCID logo; Wagner, Andreas ORCID logo; Hirschmann, Eric ORCID logo; Corley-Wiciak, Cedric; Zoellner, Marvin; Capellini, Giovanni; Fromherz, Thomas; Brehm, Moritz
Publisher Rodare
Publication Year 2024
Rights Creative Commons Attribution 4.0 International; Open Access; https://creativecommons.org/licenses/by/4.0/legalcode; info:eu-repo/semantics/openAccess
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Language English
Resource Type Dataset
Discipline Life Sciences; Natural Sciences; Engineering Sciences