Having established the carrier lifetime spectroscopy in intrinsic Si with the photo-MuSR method in our previous beam times, we recently found its sensitivity for both bulk and surface recombination rate. This is a very unique and important feature because there is no other lifetime spectroscopy technique that can measure both of them independently from a single measurement. To further develop and investigate this method, we need to change the muon implantation depth to obtain a clearer picture of carrier dynamics and more accurate fitting. The wafer surface may be passivated for lower surface velocity to compare the carrier dynamics with an as-received wafer.