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Photochemical anisotropy and direction-dependent optical absorption propertie...
Photochemical reactions on semiconductors are anisotropic, since they occur with different rates on surfaces of different orientation. Understanding the origin of this... -
Fermi energy determination for advanced smearing techniques
Smearing techniques are widely used in first-principles calculations of metallic and magnetic materials, where they improve the accuracy of Brillouin zone sampling and lessen... -
Nitrogen impurity study in oxide semiconductors under photo excitation
This dataset has no description
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Data publication: Separated electronic and strain interfaces in core/dual-she...
This dataset is raw streak camera images for nanowire, PL spectra, python code for fitting. -
DFT results for 512-atom cell containing Al impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing B impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing Al impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing Ga impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing In impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom perfect silicon cell (for comparison)
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for silicon primitive cell (for comparison)
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the...
