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Trimmed graphene nanoribbon junctions dataset
As Moore's law approaches its fundamental limits, the development of nanoelectronic devices using low-dimension materials has become a promising avenue for further... -
Magnetic Disorder at Fe/MgO and Co/MgO Interfaces
The tunnel magnetoresistive effect (TMR) is critically dependent upon interfacial disorder. Polarised neutron reflectivity will be used to characterise the magnetic roughness at... -
Influence of Mg insert layers on interface magnetism in crystalline CoFe(B)/M...
We plan to investigate the influence of thin Mg insert layers on magnetism at buried interfaces in structures that model the lower electrode/barrier interface in... -
A Study of the Reduced interfacial Magnetisation in a Heusler/Insualator Tunn...
For many Heusler compounds a spin polarisation close to 100% was predicted by band structure calculations. Thus if those materials are incorporated in magnetic tunnel junctions,... -
Influence of Mg insert layers on interface magnetism in crystalline CoFe(B)/M...
We plan to continue our previous investigation on the influence of thin Mg insert layers on magnetism at buried interfaces in structures that model the lower electrode/barrier... -
Temperature dependent interface magnetisation of Heusler compounds in magneti...
A large magnetoresistance (TMR) is expected when half metallic ferromagnets are used in magnetic tunneling junctions with polycrystalline AlOx barrier. We have recently observed...
