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Direct spectroscopy of muon donor and acceptor levels in silicon carbide
We will perform direct laser spectroscopy to measure the ionisation energy of muon defect levels in a semiconductor - specifically silicon carbide. We should see a broad... -
Can photo-MuSR method measure carrier recombination lifetime in direct gap se...
In the past years we have developed a method measuring carrier recombination lifetime in semiconductors using the photo-MuSR setup in HIFI. These studies have focused on... -
Effects of IR Illumination on Mu Dynamics and Mu0 Formation in TiO2
We propose a study of Mu dynamics and the low temperature Mu$^0$-like states in TiO$_{2}$ under near-IR illumination to investigate the resulting excitonic states and behaviour.... -
Continuation of Effects of IR Illumination on Mu Dynamics and Mu0 Formation i...
We propose additional Muon Spectroscopy of Excite States (MuSES) measurements on TiO${2}$ to investigate Mu dynamics and low temperature Mu$^{0}$-like states in TiO${2}$ under... -
Spectroscopy of muon centres in n-type silicon carbide
We propose a series of measurements to complete the previous direct spectroscopic measurements of the Muonium defect energy levels in Silicon Carbide (SiC; RB110134). We will... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Spectroscopy of muon centres in n-type silicon carbide
We propose a series of measurements to complete the previous direct spectroscopic measurements of the Muonium defect energy levels in Silicon Carbide (SiC; RB110134). We will...
