This dataset contains the Optical images obtained on different MIM devices after inducing multiple Dielectric Breakdown (BD) events of the gate dielectric. The images were taken under different conditions in order to evaluate their suitability as entropy source for the implementation of Physical Unclonable Funtions (PUF) in security applications. The dataset corresponds to the raw images, without any type of processing.
METHODOLOGICAL INFORMATION
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The dataset corresponds to the optical images measured on MIM structures after multiple dielectric breakdown events of the gate stack. The analyzed devices are MIM devices (Pt/HfO2/Pt) manufactured on a thick SiO2 layer grown onto a Si substrate, with an area of 500 um x 500 um. The HfO2 layer thickness is 30nm and was grown by Atomic Layer Deposition (ALD). The capacitors were stressed by applying a constant voltage stress of -9V to the gate for 60 seconds, so that multiple BD events were registered. After the stress, optical images were obtained with an Optical Microscope Nikon ECLIPSE LV150N, Bright Field, with long working distance objectives 10X, and were registered with a CMOS camera Moticam of 5 Megapixels resolution. All images were obtained using identical illumination conditions.
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Methods for processing the data:
Data has not been processed.
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Instrument- or software- specific information needed to interpret the data:
Software necessary to open jpg and tiff files.
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Instruments, calibration and standards information:
keithley 4200A-SCS, to induce the breakdown of the devices and Optical Microscope Nikon ECLIPSE LV150N, Bright Field,to obtain the images.
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Environmental or experimental conditions:
The measurements were done in ambient conditions
; Redón, Miquel