Zinc oxide is an important semiconductor material used in a wide range of industrial applications, many of which require both n-type and p-type components. It can easily be doped n-type, but it is difficult to dope p-type. This has been attributed to the nature of its intrinsic defects, which cause a self-compensation of free carriers. It is, therefore, important to understand the nature of its intrinsic defects. There have been many first-principles calculations of the stability of intrinsic defects in zinc oxide. These theoretical predictions also give the local distortion of the surrounding lattice, and this can be tested directly using diffuse neutron scattering. We have large single crystals of as-grown nominally stoichiometric, oxidised and reduced zinc oxide, and we propose to measure the diffuse scattering using neutron Laue diffraction on SXD.