EuO is the ferromagnetic oxide semiconductor with the highest demonstrated value of conduction band exchange splitting (0.6 eV), which makes it at present one of the most promising material for achieving high spin filtering in magnetic tunnelling junctions. We intend to study the tunnelling of single electrons in quantum dots through a spin filtering EuO barrier, as a collaboration merging the expertise in our group on ferromagnetic thin film structures with the Semiconductor Physics group expertise on quantum dots at the Cavendish Laboratory in Cambridge.In this light we strongly believe that it is now necessary to study how EuO interacts with different metallic electrodes such as NiFe, Co and Y, and with substrates commonly used in spintronic devices, Si and GaAs, and how the magnetic moment of EuO is influenced by and influences the adjacent layers.