Storage density is a key-issue in the field of information storage. Storage densities in PC-RAM memories could be drastically increased thanks to phase-change materials that could offer the possibility of making multi-level cells. Changing its amorphized volume could systematically alter the cell resistance. This process requires, however, a stable amorphous state, i.e., a material with a time-independent resistance. This effect, commonly denoted as resistance drift, may cause severe data corruption over time and thus hampers the realization of multi-level phase change memories.We recently combined the amorphous state resistivity measurements to structural and thermal analyses in amorphous GexTe100-x films. Our results allow us to identify two singularities, which could be linked to a phase separation in films with x > 25 or x > 35 at.% Ge. In this context, we propose to extend the structural investigations of the Ge-Te system by exploring possible structural rearrangement using small angle neutron scattering (SANS). These measurements will help to understand the ageing of the Ge-Te films, which could be interesting in the operation mode of electrical memories.