Synaptic Behavior in Ferroelectric Epitaxial Rhombohedral Hf0.5Zr0.5O2 Thin Films

DOI

In this work, the switching mechanism of the rhombohedral phase of HZO films is characterized by a two-stage process. In addition, the synaptic behaviour of this phase is presented, comparing it with previous reports on orthorhombic or non-epitaxial films. Unexpected similarities have been found between these structurally distinct systems.

Identifier
DOI https://doi.org/10.34894/2PP3TR
Related Identifier IsCitedBy https://doi.org/10.1088/2634-4386/ac970c
Metadata Access https://dataverse.nl/oai?verb=GetRecord&metadataPrefix=oai_datacite&identifier=doi:10.34894/2PP3TR
Provenance
Creator Wei, Yingfen ORCID logo; Vats, Gaurav ORCID logo; Noheda, Beatriz ORCID logo
Publisher DataverseNL
Contributor Groningen Digital Competence Centre; University of Groningen
Publication Year 2022
Rights CC0-1.0; info:eu-repo/semantics/openAccess; http://creativecommons.org/publicdomain/zero/1.0
OpenAccess true
Contact Groningen Digital Competence Centre (University of Groningen)
Representation
Resource Type Dataset
Format text/csv
Size 39982; 13003; 854; 863; 849; 384; 2514; 18637
Version 1.0
Discipline Chemistry; Natural Sciences; Physics