Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors

DOI

Advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors, for which the input files are reported. Both n-and p-type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering.

Identifier
DOI https://doi.org/10.24435/materialscloud:2v-ft
Related Identifier https://doi.org/10.1109/LED.2021.3055287
Related Identifier https://archive.materialscloud.org/communities/mcarchive
Related Identifier https://doi.org/10.24435/materialscloud:a3-z0
Metadata Access https://archive.materialscloud.org/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai:materialscloud.org:1089
Provenance
Creator Klinkert, Cedric; Fiore, Sara; Backmann, Jonathan; Lee, Youseung; Luisier, Mathieu
Publisher Materials Cloud
Contributor Klinkert, Cedric
Publication Year 2021
Rights info:eu-repo/semantics/openAccess; Creative Commons Attribution 4.0 International; https://creativecommons.org/licenses/by/4.0/legalcode
OpenAccess true
Contact archive(at)materialscloud.org
Representation
Language English
Resource Type info:eu-repo/semantics/other
Format text/markdown; application/zip; text/plain
Discipline Materials Science and Engineering