Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
| Identifier | |
|---|---|
| DOI | https://doi.org/10.18419/DARUS-4810 |
| Related Identifier | IsCitedBy https://doi.org/10.1038/s41467-025-59647-9 |
| Metadata Access | https://darus.uni-stuttgart.de/oai?verb=GetRecord&metadataPrefix=oai_datacite&identifier=doi:10.18419/DARUS-4810 |
| Representation | |
|---|---|
| Resource Type | Dataset |
| Format | text/tab-separated-values |
| Size | 16887; 4179; 2608575; 22190; 2228; 486118; 112765069; 81124; 8356; 346208; 68560; 31702; 12821; 13567; 762; 316; 341; 470; 5974; 1963759; 10123; 2038; 5104; 1028; 78352; 777; 5189420; 358747; 129430; 1414208; 58858; 1137765; 1159935; 118912694; 114523696; 111706064; 19280158; 19316490; 19315566; 5228586; 5227164; 5224925; 524010; 230718; 90780; 464290; 1846; 48506; 1357; 8051; 7409; 744; 1115862; 1509483; 1051; 4813; 46004 |
| Version | 1.0 |
| Discipline | Natural Sciences; Physics |
