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Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Detection of Spin-Polarized Conduction Electrons in Si by MuSR
One of the challenges of developing Silicon-based spintronics technology is developing non-destructive methods for characterizing spin-polarized conduction electrons. Si is... -
Effects of IR Illumination on Mu Dynamics and Mu0 Formation in TiO2
We propose a study of Mu dynamics and the low temperature Mu$^0$-like states in TiO$_{2}$ under near-IR illumination to investigate the resulting excitonic states and behaviour.... -
Photoinduced carrier lifetime in silicon: E-field application for carrier sep...
This continuing experiment is proposed based on our previous experiment RB1510208, which we have carried out just recently. The experiment successfully observed the lifetime of... -
Charge transport studies in n-type phthalocyanines (RB920501)
This experiment addresses the study of electron transport in zinc-hexadecafluoro-phthalocyanine (F16-ZnPc), a model n-type phthalocyanine employed in organic electronics, using... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Muon Detection of Spin-Polarized Conduction Electrons Induced by Circularly-P...
This dataset has no description
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Switching p-type to high-performance n-type organic electrochemical transisto...
High-performance n-type organic electrochemical transistors (OECTs) are essential for logic circuits and sensors. However, the performances of n-type OECTs lag far behind that...