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Muonium Defect Levels in 4H Silicon Carbide
We propose to obtain the temperature dependence of the diamagnetic spin-precession amplitudes up to 1100 K for the three electrical types of 4H-SiC in order to extract the Mu... -
Structure and stoichiometry of boron carbides synthesised by microwave heating
A key focus in industrial processing is finding greener routes to well-established, high performance materials. Boron carbide is such a material, with excellent mechanical and...