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DFT results for 512-atom cell containing Al impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing B impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing Al impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing Ga impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom cell containing In impurity
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for 216-atom perfect silicon cell (for comparison)
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the... -
DFT results for silicon primitive cell (for comparison)
Acceptor impurities in semiconductors bind a hole from the valence band at low temperatures; at higher temperatures, the hole becomes mobile and contributes to the the...
