-
Data about surface passivation of c-Ge by Al2O3 films
Data regarding the measurement of effective surface recombination velocity (Seff) and fixed charge (Qf) as a function of aSiCx thickness. Data of Capacitance-Voltage (C-V)... -
Data about surface passivation of c-Ge by Al2O3 films
Data regarding the measurement of effective surface recombination velocity (Seff) and fixed charge (Qf) as a function of aSiCx thickness. Data of Capacitance-Voltage (C-V)...
