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Auger recombination in low temperature silicon measured by photo-MuSR technique
We measure electron-hole recombination rate in low-temperature pure silicon using the photo-MuSR technique. The previous works have measured the recombination rate down to -30... -
Auger recombination in low temperature silicon measured by photo-MuSR technique
We measure electron-hole recombination rate in low-temperature pure silicon using the photo-MuSR technique. The previous works have measured the recombination rate down to -30... -
Direct spectroscopy of muon donor and acceptor levels in silicon carbide
We will perform direct laser spectroscopy to measure the ionisation energy of muon defect levels in a semiconductor - specifically silicon carbide. We should see a broad... -
Effects of IR Illumination on Mu Dynamics and Mu0 Formation in TiO2
We propose a study of Mu dynamics and the low temperature Mu$^0$-like states in TiO$_{2}$ under near-IR illumination to investigate the resulting excitonic states and behaviour.... -
Spectroscopy of muon centres in n-type silicon carbide
We propose a series of measurements to complete the previous direct spectroscopic measurements of the Muonium defect energy levels in Silicon Carbide (SiC; RB110134). We will... -
Spectroscopy of muon centres in n-type silicon carbide
We propose to continue laser spectroscopy measurements of the muonium (Mu-) centres in n-type doped silicon carbide. Scanning a wide wavelength range, and changing the relative... -
Probing the products of free radical reactions in ionic liquids
Many room temperature ionic liquids (salts with melting points near room temperature that hereafter will be referred to as ionic liquids) are ¿green solvents¿ for chemical... -
Inelastic neutron scattering study on double perovskite Sr2TIrO6 (T = Ca, Sc,...
Recent observation of AFM transition at 1.3 K in Sr2YIrO6 with Ir in 5+ valence state has motivated research interests in the double perovskite Sr2TIrO6. Usually Ir5+ with a...