-
Muon soft error effects at 16 and 20 nm technology nodes
Semiconductor industry is currently offering 16 nm technology node with FinFET fabrication processes. Soft error causing mechanisms and error rates for FinFET technologies are... -
Soft errors caused by muons and neutrons at 20 nm technology node
Soft errors are expected to be the most dominant failure mechanism at 20 nm technology node. With the low critical charge requirements for an upset (~ 0.1 fC), SRAM cells and... -
Neutron soft error effects at 16 and 20 nm technology nodes
Semiconductor industry is currently offering 16 nm technology node with FinFET fabrication processes. Soft error causing mechanisms and error rates for FinFET technologies are...
