One of the technological goals is to create materials that show high permittivity and low dielectric loss, which has been achieved by the co-doping of Nb and In into rutile TiO2. This is due to the Nb(V) and In(III) inducing a larger number of oxygen vacant sites or defects which can trap an electron and it is this confined electron that has a large polarisability compared to electrons confined to an atom leading to the observed dielectric properties. The trapped state of the electrons is of great interest in understanding the fundamental properties of the material where magnetic ordering is seen to emerge at low temperature due to a freezing of the electrons within the defects. Muons can provide a great advantage for studying weak magnetic systems and it is hoped they will elucidate information on the electron freezing and magnetism.